The Paul Drude Institute and Bizmuth MBE Ltd. unveiled a collaborative project integrating large language models and multimodal AI technologies to autonomously control molecular beam epitaxy (MBE) of gallium nitride semiconductors. MBE is a precision technique for growing high-purity crystalline films critical to electronics and quantum devices, but traditionally dependent on manual operator adjustments. This AI-driven approach aims to optimize growth protocols with minimal human input, potentially improving reproducibility and scalability for industrial and research applications. The initial focus on GaN sets a foundation for extending autonomous control to more complex material systems.